Core Infrastructure

Compound Semiconductor GaN fab facility

A state-of-the-art compound semiconductor GaN fab is being established to manufacture and process 6-inch GaN epi wafers, enabling high-yield production of red, green, blue, and white Mini/Micro-LEDs. The facility integrates advanced epitaxy and downstream processes to deliver high-efficiency, high-brightness solutions for next-generation display and lighting applications.

  • GaN fab to manufacture 6” epi wafers for Red, Green & Blue Mini/Micro-LEDs
  • GaN foundry setup with technical collaboration with Lumens & Soft-Epi
  • Monolithic R G B Pixel manufacturing (Soft-Epi's core technology)
  • GaN and AlGaInP Mini/Micro-LEDs 6” wafers
Monolithic RGB wafer

Techonology

Step 1

Substrate Preparation

Selection and cleaning of sapphire substrates to ensure low defect density and good lattice compatibility.

Step 2

GaN epitaxial Growth (MOCVD)

Deposition of GaN layers using MOCVD techniques, forming buffer layers, n-GaN, p-GaN, and multiple quantum wells (MQWs).

Step 3

Wafer Inspection & Characterization

Measurement of thickness, uniformity, wavelength, and defect density.

Step 4

Photolithography

Patterning of microLED pixels using high-resolution lithography.

Step 5

Etching

Dry etching to define individual microLED mesas and expose n-GaN layers.

Step 6

Wafer Thinning / Substrate Processing

Laser lift-off (for sapphire) or thinning for improved light extraction and integration.

Step 7

MicroLED Chip Singulation / Mass Transfer Prep

Dicing or preparation for mass transfer processes to place microLEDs onto backplanes.

Step 8

Testing & Binning

Electrical and optical testing for brightness, wavelength uniformity, and defect sorting.

Step 9

Integration

Mass transfer of RGB microLEDs onto CMOS/TFT backplanes for display modules.

Flip-chip Mini/Micro-LED Specifications

Absolute maximum ratings and electrical / optical characteristics for Red, Green, and Blue flip-chip LEDs, organized in a clean summary layout for product and technology presentations.

  • Flip-chip LED specifications for Red, Green, and Blue emitters
  • Measured at Ta = 25 °C and If = 5 mA
  • Includes absolute maximum ratings and electrical / optical characteristics
  • Manufacturer-pending items are clearly marked
Test Condition

If = 5 mA

Electrical and optical values are shown at the same current condition for easier comparison.

Ambient Temperature

Ta = 25 °C

All maximum ratings and typical values are referenced after packaging at room temperature.

Package Notes

Pending data marked clearly

Pulse forward current and viewing angle remain manufacturer inputs and are visually flagged.

Red Flip-chip LED

620–625 nm · 622.5 nm typ.

Absolute Maximum Ratings
DC Forward Current25 mA
Pulse Forward CurrentPending
Operating Temperature−40 ~ +85 °C
Storage Temperature−40 ~ +85 °C
Junction Temperature≤ 110 °C

Green Flip-chip LED

520–535 nm · 527.5 nm typ.

Absolute Maximum Ratings
DC Forward Current25 mA
Pulse Forward CurrentPending
Operating Temperature−40 ~ +85 °C
Storage Temperature−40 ~ +85 °C
Junction Temperature≤ 110 °C

Blue Flip-chip LED

465–475 nm · 470 nm typ.

Absolute Maximum Ratings
DC Forward Current25 mA
Pulse Forward CurrentPending
Operating Temperature−40 ~ +85 °C
Storage Temperature−40 ~ +85 °C
Junction Temperature≤ 110 °C

Red Color Flip-chip LED

620–625 nm · 622.5 nm typ.

Electrical & Optical Characteristics
ParameterConditionMin.Typ.Max.Unit
DC Forward Voltage@ 5 mA1.82.02.2V
Reverse Current@ −25 V00.1μA
Reverse Voltage@ −10 μA3060V
Dominant Wavelength@ 5 mA620622.5625nm
Luminous Intensity@ 5 mA175280370mcd
ESDHBM1kV
Viewing AnglePending°
Notes: Pulse Forward Current and Viewing Angle are marked as pending. Green and Blue luminous intensity values are based on the supplied optical power.

Green Color Flip-chip LED

520–535 nm · 527.5 nm typ.

Electrical & Optical Characteristics
ParameterConditionMin.Typ.Max.Unit
DC Forward Voltage@ 5 mA2.22.452.7V
Reverse Current@ −12 V00.1μA
Reverse Voltage@ −10 μA15V
Dominant Wavelength@ 5 mA520527.5535nm
Optical Power@ 5 mA246mW
Luminous Intensity@ 5 mA34.6669104mcd
ESDHBM2kV
Viewing AnglePending°
Notes: Pulse Forward Current and Viewing Angle are marked as pending. Green and Blue luminous intensity values are based on the supplied optical power.

Blue Color Flip-chip LED

465–475 nm · 470 nm typ.

Electrical & Optical Characteristics
ParameterConditionMin.Typ.Max.Unit
DC Forward Voltage@ 5 mA2.62.853.1V
Reverse Current@ −12 V00.1μA
Reverse Voltage@ −10 μA15V
Dominant Wavelength@ 5 mA465470475nm
Optical Power@ 5 mA5811mW
Luminous Intensity@ 5 mA86.66139190mcd
ESDHBM2kV
Viewing AnglePending°
Notes: Pulse Forward Current and Viewing Angle are marked as pending. Green and Blue luminous intensity values are based on the supplied optical power.

Applications

Next-Generation Displays

Ultra-high brightness, contrast, and energy-efficient displays for TVs, digital cinemas, home theatres, monitors, smartphones, smartwatches, and tablets.

AR & VR Microdisplays

Microdisplays for AR/VR headsets requiring very high pixel density, low power consumption, and excellent color performance.

Automotive Displays & Lighting

Advanced dashboards, heads-up displays (HUDs), and adaptive lighting systems with high brightness and reliability in harsh conditions.

Large-Scale Digital Signage

Outdoor and indoor video walls, advertising billboards, and stadium displays with high luminance and durability.

Wearables & IoT Devices

Compact, low-power displays for fitness bands, smart glasses, and other connected devices.

Optical Communication (Li-Fi)

High-speed data transmission using visible light, leveraging fast switching capabilities of MicroLEDs.

Biomedical & Sensing

MicroLED arrays for medical imaging, biosensing, optogenetics, and lab-on-chip systems.

Industrial & Defense

Rugged displays and optical systems for avionics, simulation, night vision augmentation, and mission-critical environments.

Micro-Projection & Specialty Lighting

High-resolution micro-projectors and tunable lighting using individually addressable RGB emitters.

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